M28W640HCB70N6F NUMONYX, M28W640HCB70N6F Datasheet - Page 22
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M28W640HCB70N6F
Manufacturer Part Number
M28W640HCB70N6F
Description
IC FLASH 64MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Datasheet
1.M28W640HCB70N6F.pdf
(72 pages)
Specifications of M28W640HCB70N6F
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M28W640HCB70N6FCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Table 4.
1. X = Don't care, RA=Read Address, RD=Read Data, SRD=Status Register Data, ID=Identifier (manufacturer and device
2. The signature addresses are listed in Tables 5,
3. Program addresses 1 and 2 must be consecutive addresses differing only for A0.
4. Program addresses 1,2,3 and 4 must be consecutive addresses differing only for A0 and A1.
22/72
Read Memory
Array
Read Status
Register
Read
Electronic
Signature
Read CFI
Query
Erase
Program
Double Word
Program
Quadruple
Word
Program
Clear Status
Register
Program/Erase
Suspend
Program/Erase
Resume
Block Lock
Block Unlock
Block Lock-
down
Protection
Register
Program
Commands
code), QA=Query Address, QD=Query Data, BA=Block Address, PA=Program Address, PD=Program Data,
PRA=Protection Register Address, PRD=Protection Register Data.
(3)
(4)
Commands
1+ Write
1+ Write
1+ Write
1+ Write
2
2
3
5
1
1
1
2
2
2
2
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Op. Add Data
1st cycle
(1)
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
40h or
FFh
B0h
D0h
C0h
70h
90h
98h
20h
10h
30h
56h
50h
60h
60h
60h
Read
Read
Read SA
Read
Write
Write
Write PA1
Write PA1
Write
Write
Write
Write PRA PRD
Op.
2nd cycle
6
and 7.
Add Data
RA
QA
BA
PA
BA
BA
BA
X
(2)
SRD
PD1 Write PA2 PD2
PD1 Write PA2 PD2 Write PA3 PD3 Write PA4 PD4
D0h
D0h
01h
2Fh
IDh
RD
QD
PD
Bus write operations
Op. Add Data Op. Add Data Op. Add Data
3rd cycle
4th cycle
5th cycle