CY7C1568V18-400BZXC Cypress Semiconductor Corp, CY7C1568V18-400BZXC Datasheet - Page 20

no-image

CY7C1568V18-400BZXC

Manufacturer Part Number
CY7C1568V18-400BZXC
Description
IC SRAM 72MBIT 400MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1568V18-400BZXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
72M (2M x 36)
Speed
400MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1568V18-400BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1568V18-400BZXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ........ –0.5V to V
DC Input Voltage
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Notes
Document Number: 001-06551 Rev. *E
V
V
V
V
V
V
V
V
I
I
V
I
15. Overshoot: V
16. Power up: assumes a linear ramp from 0V to V
17. Outputs are impedance controlled. I
18. Outputs are impedance controlled. I
19. V
20. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
[20]
REF
(min) = 0.68V or 0.46V
IH
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
(AC) < V
DD
[15]
Operating Supply
DD
DDQ
.............................. –0.5V to V
DDQ
Description
Relative to GND ........–0.5V to +2.9V
Relative to GND.......–0.5V to +V
+ 0.3V (pulse width less than t
DDQ
[13]
, whichever is larger. V
OH
OL
= (V
= –(V
DDQ
DDQ
[19]
DD
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
(min) within 200 ms. During this time V
Note 17
Note 18
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
I
f = f
OH
OL
OUT
DD
REF
= 0.1 mA, Nominal Impedance
= –0.1 mA, Nominal Impedance
MAX
= Max,
= 0 mA,
CYC
DDQ
(max) = 0.95V or 0.54V
DD
= 1/t
/2). Undershoot: V
I
I
+ 0.3V
+ 0.3V
≤ V
≤ V
Test Conditions
CYC
DDQ
DDQ,
DD
Output Disabled
IL
(AC) >
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015)... >2001V
Latch up Current..................................................... >200 mA
Operating Range
DDQ
Commercial
Industrial
400MHz
375MHz
333MHz
300MHz
, whichever is smaller.
IH
Range
< V
0.3V (pulse width less than t
DD
and V
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
CY7C1566V18, CY7C1577V18
CY7C1568V18, CY7C1570V18
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
DDQ
Temperature (T
V
V
–40°C to +85°C
< V
DDQ
DDQ
0°C to +70°C
V
V
DD
DDQ
REF
Ambient
–0.15
0.68
.
Min
V
/2 – 0.12
/2 – 0.12
1.7
1.4
–2
–2
SS
+ 0.1
– 0.2
CYC
/2).
A
0.75
Typ
)
1.8
1.5
1.8 ± 0.1V
V
V
V
DD
V
DDQ
DDQ
V
DDQ
REF
[16]
V
1400
1400
1400
1400
1300
1300
1300
1300
1200
1200
1200
1200
1100
1100
1100
1100
Max
0.95
V
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
2
2
+ 0.15
– 0.1
Page 20 of 28
V
1.4V to
DDQ
V
DD
Unit
mA
mA
mA
mA
[16]
μA
μA
V
V
V
V
V
V
V
V
V
[+] Feedback
[+] Feedback

Related parts for CY7C1568V18-400BZXC