W19B320BTT7H Winbond Electronics, W19B320BTT7H Datasheet - Page 20

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W19B320BTT7H

Manufacturer Part Number
W19B320BTT7H
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Winbond Electronics
Datasheet

Specifications of W19B320BTT7H

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-20°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
W19B320BTT-H
W19B320BTT-H
W19B320BT/B DATASHEET
6.3.7
DQ3: Sector Erase Timer
After writing a sector erasure command sequence, the system may read DQ3 to determine whether erasure
has begun or not. (The sector erase timer does not apply to the chip erase command.) The entire time-out
applies after each additional sector erasure command if additional sectors are selected for erasure. Once
the timeout period has completed, DQ3 switches from “0” to “1.” If the time between additional sector erase
commands from the system can be assumed to be less than 50 μs, the system need not monitor, DQ3 does
not need to be monitored. Please also refer to Sector Erase Command Sequence section.
#Data Polling
After the sector erase command is written, the system should read the status of DQ7 (
) or
DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If
DQ3 is“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are
ignored until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase
commands.
The system software should check the status of DQ3 before and following each subsequent sector erase
command to ensure the command has been accepted. If DQ3 is high on the second status check, the last
command might not have been accepted.
Publication Release Date:Dec.25, 2007
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Revisionv A3

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