CY7C1512AV18-250BZI Cypress Semiconductor Corp, CY7C1512AV18-250BZI Datasheet - Page 21

• Manufacturer Part Number: CY7C1512AV18-250BZI
• Description: IC SRAM 72MBIT 250MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512AV18-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 38-05565 Rev. *E
Notes:
AC Test Loads and Waveforms
Capacitance
Thermal Resistance
22. Tested initially and after any design or process change that may affect these parameters.
23. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, V
C
C
C
Θ
Θ
Parameter
Parameter
IN
CLK
O
JA
JC
pulse levels of 0.25V to 1.25V, and output loading of the specified I
OUTPUT
Device
Under
Test
V
REF
ZQ
(a)
Input Capacitance
Clock Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[22]
Z
RQ =
250Ω
0.75V
0
= 50Ω
Description
Description
[22]
V
REF
R
= 0.75V
L
= 50Ω
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
T
A
= 25°C, f = 1 MHz, V
Device
Under
Test
OUTPUT
V
REF
ZQ
OL
/I
Test Conditions
Test Conditions
OH
0.75V
RQ =
250Ω
(b)
and load capacitance shown in (a) of AC Test Loads.
V
REF
DD
= 0.75V
= 1.8V, V
R = 50Ω
5 pF
DDQ
0.25V
= 1.5V
1.25V
REF
Slew Rate = 2 V/ns
ALL INPUT PULSES
165 FBGA
= 0.75V, RQ = 250Ω, V
Package
0.75V
Max.
16.2
2.3
5.5
8.5
8
CY7C1517V18
CY7C1528V18
CY7C1519V18
CY7C1521V18
DDQ
Page 21 of 28
[23]
°C/W
°C/W
Unit
Unit
= 1.5V, input
pF
pF
pF