CY7C1512AV18-250BZI Cypress Semiconductor Corp, CY7C1512AV18-250BZI Datasheet - Page 16
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CY7C1512AV18-250BZI
Manufacturer Part Number
CY7C1512AV18-250BZI
Description
IC SRAM 72MBIT 250MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheets
1.CY7C1514AV18-167BZXC.pdf
(28 pages)
2.CY7C1512AV18-200BZXC.pdf
(26 pages)
3.CY7C1512AV18-200BZXC.pdf
(24 pages)
4.CY7C1514AV18-200BZXI.pdf
(28 pages)
Specifications of CY7C1512AV18-250BZI
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (4M x 18)
Speed
250MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1512AV18-250BZI
Manufacturer:
CYPRESS
Quantity:
490
Company:
Part Number:
CY7C1512AV18-250BZI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Company:
Part Number:
CY7C1512AV18-250BZIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05565 Rev. *E
TAP AC Switching Characteristics
TAP Timing and Test Conditions
Hold Times
t
t
t
Output Times
t
t
TMSH
TDIH
CH
TDOV
TDOX
Parameter
TDO
Test Mode Select
TMS
Test Clock
TCK
Test Data-In
TDI
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
Test Data-Out
TDO
Z
0
= 50Ω
(a)
GND
0.9V
C
50Ω
L
= 20 pF
[13]
Over the Operating Range
Description
t
TMSS
t
TDIS
t
TH
0V
t
TDOV
t
TL
t
t
TMSH
[12, 13]
TDIH
(continued)
1.8V
t
TCYC
t
ALL INPUT PULSES
TDOX
0.9V
Min.
5
5
5
0
CY7C1517V18
CY7C1528V18
CY7C1519V18
CY7C1521V18
Max.
10
Page 16 of 28
Unit
ns
ns
ns
ns
ns