M29F400BB70N6 NUMONYX, M29F400BB70N6 Datasheet - Page 27

• Manufacturer Part Number: M29F400BB70N6
• Description: IC FLASH 4MBIT 70NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M29F400BB70N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 4M (512K x 8 or 256K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M29F400BT, M29F400BB
7
Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in
Table 8.
1. T
2. T
Chip Erase (All bits in the memory set to ‘0’)
Chip Erase
Block Erase (64 Kbytes)
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
A
A
= 0 to 70°C, –40 to 85°C or –40 to 125°C
= 25°C, V
Table
Program/ Erase times endurance cycles
CC
8. Exact erase times may change depending on the memory array condition.
Parameter
= 5V.
Program and erase times and endurance cycles
100,000
Min
Typ
1.5
0.6
4.5
2.3
5
8
(2)
(1)
100k W/E Cycles
Typical after
1.5
0.6
4.5
2.3
(2)
5
8
Max
150
20
18
4
9
cycles
Unit
27/40
µs
s
s
s
s
s