CY7C109BN-12ZXCT Cypress Semiconductor Corp, CY7C109BN-12ZXCT Datasheet - Page 4

• Manufacturer Part Number: CY7C109BN-12ZXCT
• Description: IC SRAM 1MBIT 12NS 32TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C109BN-12ZXCT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 001-06430 Rev. **
Data Retention Characteristics
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2 (OE Controlled)
Notes:
10. Device is continuously selected. OE, CE
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE
V
I
t
t
Parameter
CCDR
CDR
R
DR
DATA OUT
DATA OUT
ADDRESS
CURRENT
ADDRESS
SUPPLY
V
CE
CE
V
CE
OE
CC
CC
1
2
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
[10, 11]
for Data Retention
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
Description
t
LZCE
1
[11, 12]
= V
1
t
t
LZOE
ACE
transition LOW and CE
IL
, CE
Over the Operating Range (Low Power version only)
t
OHA
50%
t
t
CDR
DOE
2
4.5V
= V
IH
.
t
AA
2
transition HIGH.
t
RC
No input may exceed V
V
CE
V
DATA RETENTION MODE
CC
IN
1
> V
= V
> V
t
RC
V
CC
DR
CC
DR
– 0.3V or V
>
= 2.0V,
– 0.3V or CE
2V
Conditions
DATA VALID
IN
CC
2
< 0.3V
< 0.3V,
+ 0.5V
t
DATA VALID
HZOE
4.5V
t
R
t
HZCE
Min.
200
2.0
t
CY7C1009BN
PD
0
CY7C109BN
50%
Max
150
IMPEDANCE
HIGH
Page 4 of 9
Unit
µA
ns
µs
V
I
I
CC
SB
[+] Feedback