CY7C109BN-12ZXCT Cypress Semiconductor Corp, CY7C109BN-12ZXCT Datasheet - Page 2

• Manufacturer Part Number: CY7C109BN-12ZXCT
• Description: IC SRAM 1MBIT 12NS 32TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C109BN-12ZXCT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 001-06430 Rev. **
Selection Guide
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Electrical Characteristics
Capacitance
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
V
V
V
V
I
I
I
I
I
I
C
C
Notes:
Parameter
IX
OZ
OS
CC
SB1
SB2
2. Minimum voltage is –2.0V for pulse durations of less than 20 ns.
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
OH
OL
IH
IL
IN
OUT
Parameter
Output HIGH Voltage V
Output LOW Voltage V
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
Output Short
Circuit Current
V
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
CC
[2]
[4]
[2]
....................................–0.5V to V
Description
Operating
.................................–0.5V to V
CC
to Relative GND
Input Capacitance
Output Capacitance
[3]
[2]
Description
Over the Operating Range
GND < V
GND < V
Output Disabled
V
V
f = f
Max. V
or CE
V
Max. V
CE
V
or V
or CE
CC
CC
CC
CC
IN
IN
1
MAX
< V
> V
IN
L
Test Conditions
= Min., I
= Max., V
= Min., I
= Max., I
> V
[2]
2
2
< 0.3V, f = 0
CC
CC
< V
IL
CC
.... –0.5V to +7.0V
< 0.3V,
CC
= 1/t
, f = f
I
I
, CE
,
< V
< V
IL
– 0.3V,
– 0.3V,
, V
OH
OL
RC
OUT
CC
CC
1
MAX
OUT
IN
= –4.0 mA
CC
CC
> V
7C1009B-12
= 8.0 mA
,
7C109B-12
> V
= 0 mA,
= GND
+ 0.5V
+ 0.5V
IH
IH
T
V
12
90
10
2
A
CC
L
or
= 25°C, f = 1 MHz,
= 5.0V
Min.
–0.3
7C1009BN-12
2.4
2.2
7C109BN-12
–1
–5
Test Conditions
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Commercial
Industrial
V
Range
CC
Max.
–300
7C1009B-15
7C109B-15
0.4
0.8
+1
+5
90
45
10
2
+ 0.3
15
80
10
2
Min.
–0.3
7C1009BN-15
2.4
2.2
7C109BN-15
–1
–5
−40°C to +85°C
Temperature
0°C to +70°C
V
Ambient
CC
Max.
–300
0.4
0.8
7C1009B-20
+1
+5
80
40
10
7C109B-20
2
+ 0.3
Max.
9
8
20
75
10
2
CY7C1009BN
Min.
–0.3
7C1009BN-20
2.4
2.2
7C109BN-20
–1
–5
CY7C109BN
V
CC
Max.
–300
5V ± 10%
5V ± 10%
0.4
0.8
+1
+5
75
30
10
2
Page 2 of 9
+ 0.3
Unit
V
pF
pF
Unit
mA
mA
mA
ns
CC
Unit
mA
mA
mA
mA
mA
µA
µA
V
V
V
V
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