NAND01GW3B2AN6E STMicroelectronics, NAND01GW3B2AN6E Datasheet - Page 42

• Manufacturer Part Number: NAND01GW3B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW3B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 497-4617

DC and AC parameters
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DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 20: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 20.
Table 21.
1. T
2. Input/output capacitances double in stacked devices.
Supply voltage (V
Ambient temperature (T
Load capacitance (C
(1 TTL GATE and C
Input pulses voltages
Input and output timing ref. voltages
Output circuit resistor R
Input rise and fall times
Symbol
C
C
A
I/O
IN
= 25 °C, f = 1 MHz. C
Input capacitance
Input/output capacitance
Operating and AC measurement conditions
Capacitance
DD
L
)
L
)
)
A
ref
)
IN
Parameter
Parameter
and C
(1)
I/O
are not 100% tested.
(2)
3 V devices (2.7 - 3.6 V)
1.8 V devices
1.8 V devices
1.8 V devices
3 V devices
3 V devices
Grade 1
Grade 6
conditions. Designers should check that the
Test condition
V
V
IN
IL
= 0 V
= 0 V
NAND01G-B2B, NAND02G-B2C
Min
–40
1.7
2.7
0.4
0
0
NAND flash
Typ
V
8.35
DD
30
50
5
/2
Max
1.95
V
3.6
2.4
70
85
DD
Max
10
10
Units
pF
pF
kΩ
°C
°C
Unit
ns
V
V
V
V
V
pF
pF