NAND256W3A0AN6E STMicroelectronics, NAND256W3A0AN6E Datasheet - Page 34
![IC FLASH 256MBIT 48TSOP](/photos/7/26/72669/497-48-tsop_series_sml.jpg)
NAND256W3A0AN6E
Manufacturer Part Number
NAND256W3A0AN6E
Description
IC FLASH 256MBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND128W3A2BN6E.pdf
(56 pages)
Specifications of NAND256W3A0AN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (32M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Speed
-
Other names
497-3613
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 18. DC Characteristics, 1.8V Devices
34/56
Symbol
I
OL
V
I
I
I
I
V
V
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
512Mb and 1Gb Dual Die devices
128Mb, 256Mb, 512Mb devices
V
DD
Stand-By Current (CMOS)
Stand-By Current (CMOS)
Output High Voltage Level
Output Low Voltage Level
Operating
Output Low Current (RB)
Output Leakage Current
Current
Input Leakage Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Parameter
Sequential
Program
Erase
Read
V
E=V
V
Test Conditions
OUT
IN
t
RLRL
I
I
OH
E=V
= 0 to V
WP=0/V
OL
V
IL,
= 0 to V
OL
I
= -100µA
= 100µA
OUT
minimum
DD
= 0.1V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
V
V
DD
DD
Min
-0.3
3
-
-
-
-
-
-
-
-
-
-0.4
-0.1
Typ
10
20
8
8
8
4
-
-
-
-
-
-
-
V
DD
Max
100
±10
±10
0.4
0.1
1.5
15
15
15
50
-
+0.3
Unit
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V