CY7C1347F-100AC Cypress Semiconductor Corp, CY7C1347F-100AC Datasheet - Page 6

IC SRAM 4.5MBIT 100MHZ 100LQFP

CY7C1347F-100AC

Manufacturer Part Number
CY7C1347F-100AC
Description
IC SRAM 4.5MBIT 100MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1347F-100AC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4.5M (128K x 36)
Speed
100MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1539

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1347F-100AC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05213 Rev. *C
Interleaved Burst Sequence
ZZ Mode Electrical Characteristics
Truth Table
I
t
t
t
t
Deselect Cycle, Power-down
Deselect Cycle, Power-down
Deselect Cycle, Power-down
Deselect Cycle, Power-down
Deselect Cycle, Power-down
Snooze Mode, Power-down
READ Cycle, Begin Burst
READ Cycle, Begin Burst
WRITE Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
WRITE Cycle, Continue Burst
WRITE Cycle, Continue Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
Notes:
A
00
01
10
11
DDZZ
ZZS
ZZREC
ZZI
RZZI
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more Byte Write enable signals (BW
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW
6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are three-state when OE
[1:0]
Address
(BW
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is
a don't care for the remainder of the write cycle.
is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW) .
First
Parameter
A
, BW
Next Cycle
B
, BW
[2, 3, 4, 5, 6]
A
01
00
11
10
C
, BW
[1:0]
Address
Second
D
), BWE, GW = H.
Snooze mode standby current
Device operation to ZZ
ZZ recovery time
ZZ Active to snooze current
ZZ Inactive to exit snooze current
External
External
External
External
External
A
10
11
00
01
Current
Current
Current
Current
Used
None
None
None
None
None
None
Add.
Next
Next
Next
Next
Next
Next
[1:0]
Address
Third
Description
ZZ
H
H
H
H
H
H
X
X
X
X
X
X
L
L
L
L
L
L
L
L
L
A
11
10
01
00
[1:0]
Address
CE
Fourth
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
3
A
, BW
CE
X
X
H
X
H
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
B
, BW
2
ZZ > V
ZZ > V
ZZ < 0.2V
This parameter is sampled
This parameter is sampled
C
CE
, BW
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Linear Burst Sequence
A
00
01
10
11
1
[1:0]
Test Conditions
D
Address
DD
DD
) and BWE = L or GW = L. WRITE = H when all Byte write enable signals
ADSP ADSC ADV WRITE
First
− 0.2V
− 0.2V
H
H
H
H
H
H
H
X
H
H
X
X
X
H
X
X
X
L
L
L
L
X
X
H
H
H
H
H
H
H
H
H
H
L
X
X
L
L
X
L
L
L
A
01
10
11
00
[1:0]
Address
Second
[A:D]
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
. Writes may occur only on subsequent clocks
2t
H
H
H
H
H
X
X
X
X
X
X
X
X
H
H
H
H
H
Min.
L
L
L
CYC
0
A
10
11
00
01
[1:0]
Address
Third
OE
X
X
X
X
X
X
H
X
H
H
H
X
X
H
H
L
L
L
L
L
L
CY7C1347F
2t
2t
Max.
40
CYC
CYC
CLK
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
X
A
11
00
01
10
Page 6 of 19
[1:0]
Address
three-state
three-state
three-state
three-state
three-state
three-state
three-state
three-state
three-state
three-state
three-state
three-state
Fourth
Unit
DQ
mA
ns
ns
ns
ns
Q
Q
Q
Q
Q
Q
D
D
D

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