M29F400BT70N6 NUMONYX, M29F400BT70N6 Datasheet - Page 31

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M29F400BT70N6

Manufacturer Part Number
M29F400BT70N6
Description
IC FLASH 4MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of M29F400BT70N6

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8 or 256K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1709

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0
M29F400BT, M29F400BB
Figure 8.
Table 12.
1. TA = 0 to 70°C, –40 to 85°C or –40 to 125°C
2. Sampled only, not 100% tested.
Symbol
t
A0-A17/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
BYTE
t
t
t
GHQZ
GLQX
EHQZ
ELQX
t
t
t
t
t
t
t
t
t
t
t
GHQX
GLQV
EHQX
AXQX
BHQV
AVQV
ELQV
ELBH
BLQZ
AVAV
ELBL
(2)
(2)
(2)
(2)
t
t
t
t
t
FHQV
t
ELFH
FLQZ
ELFL
t
ACC
t
t
t
Alt
OLZ
t
t
t
OH
RC
CE
OE
HZ
DF
LZ
Read mode AC waveforms
Read AC characteristics
tELBL/tELBH
Address Valid to Next Address
Valid
Address Valid to Output Valid
Chip Enable Low to Output
Transition
Chip Enable Low to Output Valid
Output Enable Low to Output
Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or
Address Transition to Output
Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
Parameter
tAVQV
tBHQV
tELQX
tELQV
tGLQX
tGLQV
(1)
tAVAV
VALID
E = V
E = V
G = V
G = V
G = V
G = V
G = V
E = V
E = V
E = V
Condition
Test
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
tBLQZ
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
VALID
45
45
45
45
25
15
15
15
30
0
0
0
5
DC and AC parameters
tGHQX
tGHQZ
M29F400B
55
55
55
55
30
18
18
15
30
0
0
0
5
tEHQZ
70 / 90
20
70
70
70
30
20
20
30
0
0
0
5
tEHQX
tAXQX
AI02907
31/40
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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