M29F400BT70N6 NUMONYX, M29F400BT70N6 Datasheet - Page 20

• Manufacturer Part Number: M29F400BT70N6
• Description: IC FLASH 4MBIT 70NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M29F400BT70N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 4M (512K x 8 or 256K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-1709

Command interface
4.11
4.12
4.13
20/40
Table 5.
1. X = Don’t Care, PA = Program Address, PD = Program Data, BA = Any address in the Block.
2. All values are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands;
A11-A17, DQ8-DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is V
DQ15 when BYTE is V
Read/Reset
After a Read/Reset command, read the memory as normal until another command is
issued.
Auto Select
After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase
After these commands read the Status Register until the Program/Erase Controller
completes and the memory returns to Read Mode. Add additional Blocks during Block
Erase Command with additional Bus Write Operations until Timeout Bit is set.
Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass
Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Command
Commands, 8-bit mode, BYTE = V
6+ AAA
1
3
3
4
3
2
2
6
1
1
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
AAA
AAA
AAA
AAA
AAA
X
X
X
X
X
IH
1st
.
AA
AA
AA
AA
AA
AA
A0
B0
F0
90
30
555
555
555
555
555
555
PA
X
2nd
PD
55
55
55
55
00
55
55
AAA
AAA
AAA
AAA
AAA
Bus Write Operations
X
3rd
IL
(1) (2)
A0
F0
90
20
80
80
AAA
AAA
PA
4th
PD
AA
AA
M29F400BT, M29F400BB
555
555
5th
55
55
AAA
BA
IL
6th
or
10
30