RC28F256K3C120 NUMONYX, RC28F256K3C120 Datasheet - Page 31

• Manufacturer Part Number: RC28F256K3C120
• Description: IC FLASH 256MBIT 120NS 64BGA
• Manufacturer: NUMONYX

Specifications of RC28F256K3C120

• Rohs Status: RoHS non-compliant
• Format - Memory: FLASH
• Memory Type: StrataFlash® FLASH
• Memory Size: 256M (16Mx16)
• Speed: 120ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-BGA
• Other names: 853157

7.3
Datasheet
NOTES:
1. Typical values measured at T
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on 32-bit boundary.
6. Effective word program time (t
W0
WY
#
characterization.
Figure 16. Asynchronous Write to Read Waveform
Table 10. Block Erase and Program Operation Performance
t
t
t
t
t
WHQV1
WHQV2
WHQV3
WHQV4
WHRH1
t
t
WHRH
BEFP-SETUP
t
Sym
BBWB
t
t
BWB
STS
, t
, t
, t
, t
, t
, t
Block Erase and Program Operation Performance
EHQV1
EHQV2
EHQV3
EHQV4
EHRH1
EHRH
Address [A]
Data [D/Q]
RST # [P]
WE# [W]
OE# [G]
CE# [E}
Write Buffer Program Time (Time to program 64 bytes/32 words)
Word Program Time (Using Word Program Command)
Block Program Time (Using Write-to- Buffer Command)
Buffered-EFP Buffer Write Time
Buffered-EFP Block Write Time
Buffered-EFP Set-up Time
Block Erase Time
Program Suspend Latency Time to Read
Erase Suspend Latency Time to Read
STS Pulse Width Low Time
A
WHQV1
= +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to change based on device
, t
EHQV1
28F640K3, 28F640K18, 28F128K3, 28F128K18, 28F256K3, 28F256K18
W1
W2
) is 10.0 µs/word (typ).
Parameter
W5
W3
W3
W4
D
W7
W6
W18
W8
W14
R2
R3
Notes
4, 5, 6
1, 3, 4
1, 3, 4
1, 3, 4
R4
4
4
4
4
Min
R1
R1
Q
Typ
0.58
320
150
288
N/A
250
0.7
1.0
20
20
Max
960
450
864
2.1
1.7
5.0
4.0
25
25
R8
R10
R9
Unit
sec
sec
sec
µs
µs
µs
µs
µs
µs
ns
31