CY7C1347B-100AC Cypress Semiconductor Corp, CY7C1347B-100AC Datasheet - Page 8

• Manufacturer Part Number: CY7C1347B-100AC
• Description: IC SRAM 4.5MBIT 100MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1347B-100AC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4.5M (128K x 36)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1096

Write Cycle Description
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
Ambient Temperature with
Power Applied
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Notes:
4.
5.
6.
7.
8.
Read
Read
Write Byte 0 - DQ
Write Byte 1 - DQ
Write Bytes 1, 0
Write Byte 2 - DQ
Write Bytes 2, 0
Write Bytes 2, 1
Write Bytes 2, 1, 0
Write Byte 3 - DQ
Write Bytes 3, 0
Write Bytes 3, 1
Write Bytes 3, 1, 0
Write Bytes 3, 2
Write Bytes 3, 2, 0
Write Bytes 3, 2, 1
Write All Bytes
Write All Bytes
X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW.
The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is
a don't care for the remainder of the write cycle.
OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQ
inactive or when the device is deselected, and DQ
Minimum voltage equals 2.0V for pulse durations of less than 20 ns.
T
A
is the case temperature.
[7]
[7]
Function
[7:0]
[15:8]
[23:16]
[31:24]
DD
Relative to GND
[4, 5, 6]
0.5V to V
0.5V to V
[31:0]
65 C to +150 C
55 C to +125 C
0.5V to +4.6V
;DP
[3:0]
DD
DD
GW
= data when OE is active.
+ 0.5V
+ 0.5V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
8
BWE
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Com’l
Ind’l
Range
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
X
–40 C to +85 C
Temperature
0 C to +70 C
BW
Ambient
X
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
X
3
[3:0]
. Writes may occur only on subsequent clocks
[8]
BW
X
X
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
2
5%/+10%
3.3V
V
[31:0]
DD
CY7C1347B
;DP
BW
X
X
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
[3:0]
1
= High-Z when OE is
3.3V /+10%
2.5V 5%
V
DDQ
BW
X
X
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0