CY7C1347B-100AC Cypress Semiconductor Corp, CY7C1347B-100AC Datasheet - Page 7

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CY7C1347B-100AC

Manufacturer Part Number
CY7C1347B-100AC
Description
IC SRAM 4.5MBIT 100MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1347B-100AC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4.5M (128K x 36)
Speed
100MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1096
Cycle Descriptions
Unselected
Unselected
Unselected
Unselected
Unselected
Begin Read
Begin Read
Continue Read
Continue Read
Continue Read
Continue Read
Suspend Read
Suspend Read
Suspend Read
Suspend Read
Begin Write
Begin Write
Begin Write
Continue Write
Continue Write
Suspend Write
Suspend Write
ZZ “Sleep”
Notes:
1.
2.
3.
Next Cycle
X = “Don't Care,” 1 = HIGH, 0 = LOW.
Write is defined by BWE, BW
The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
None
None
None
None
None
External
External
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
External
Next
Next
Current
Current
None
Add. Used
[1, 2, 3]
[3:0]
, and GW. See Write Cycle Description Table.
ZZ
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
CE
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1
1
0
0
0
3
CE
X
X
X
X
X
X
X
0
X
0
1
1
X
X
X
X
X
X
X
X
1
X
X
2
CE
7
X
X
X
X
X
X
X
X
1
0
0
0
0
0
0
1
1
1
1
1
0
1
1
1
ADSP
X
X
X
X
X
X
X
X
X
0
0
1
1
0
1
1
1
1
1
1
1
1
1
ADSC
X
X
X
X
0
0
0
0
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
ADV
X
X
X
X
X
X
X
0
0
1
1
1
1
1
1
X
0
0
1
1
X
0
0
OE
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1
0
1
0
1
0
1
0
CY7C1347B
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
DQ
Hi-Z
DQ
Hi-Z
DQ
Hi-Z
DQ
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
DQ
X
X
X
X
X
X
Read
Read
Read
Read
Read
Read
Read
Read
Read
Write
Write
Write
Write
Write
Write
Write
X
Write

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