CY7C1339B-100AC Cypress Semiconductor Corp, CY7C1339B-100AC Datasheet - Page 8

• Manufacturer Part Number: CY7C1339B-100AC
• Description: IC SRAM 4MBIT 100MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1339B-100AC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1092

Document #: 38-05141 Rev. *A
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Current into Outputs (LOW) .........................................20 mA
Electrical Characteristics
Parameter
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes:
X
OZ
DD
SB1
SB2
SB3
SB4
7.
8.
DD
DDQ
OH
OL
IH
IL
Minimum voltage equals − 2.0V for pulse durations of less than 20 ns.
T
A
is the case temperature.
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage
Current
V
Current
Automatic CS
Power-Down
Current—TTL Inputs
Automatic CS
Power-Down
Current—CMOS Inputs
Automatic CS
Power-Down
Current—CMOS Inputs
Automatic CS
Power-Down
Current—TTL Inputs
[7]
DD
[7]
....................................... −0.5V to V
Operating Supply
.................................... −0.5V to V
Description
DD
Relative to GND.........−0.5V to +4.6V
[7]
Over the Operating Range
3.3V −5%/+10%
2.5V −5% to 3.3V +10%
V
V
V
V
V
V
V
V
GND ≤ V
Input = V
Input = V
Input = V
GND ≤ V
V
f = f
Max. V
V
f = f
Max. V
V
f = 0
Max. V
V
f = f
Max. V
V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DD
IN
IN
IN
IN
MAX
MAX
MAX
≥ V
≤ 0.3V or V
≤ 0.3V or V
≥ V
= Max., I
= 3.3V, V
= 2.5V, V
= 3.3V, V
= 2.5V, V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
DD
DD
DD
DD
IH
IH
= 1/t
= 1/t
= 1/t
I
SS
DDQ
SS
DDQ
I
, Device Deselected, or
, Device Deselected,
, Device Deselected,
, Device Deselected,
or V
or V
≤ V
≤ V
DD
DD
CYC
CYC
CYC
OUT
DDQ
DDQ,
IN
IN
+ 0.5V
+ 0.5V
IN
IN
DD
DD
DD
DD
≤ V
≤ V
> V
= 0 mA,
> V
= Min., I
= Min., I
= Min., I
= Min., I
Output Disabled
IL
IL
Test Conditions
DDQ
DDQ
, f = 0
– 0.3V,
– 0.3V
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Commercial
Industrial
OH
OH
OL
OL
= 8.0 mA
= 2.0 mA
= –4.0 mA
= –2.0 mA
Range
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
All speeds
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
6-ns cycle, 166 MHz
6-ns cycle, 166 MHz
6-ns cycle, 166 MHz
–40°C to +85°C
Temperature
0°C to +70°C
Ambient
[8]
3.135
2.375
Min.
–0.3
–0.3
−30
2.4
2.0
2.0
1.7
−5
−5
−5
−5%/+10%
3.3V
V
DD
CY7C1339B
V
V
DD
DD
Max.
420
375
325
150
125
125
115
3.6
3.6
0.4
0.7
0.8
0.7
30
10
95
85
18
+ 0.3V
+ 0.3V
5
5
5
Page 8 of 17
3.3V /+10%
2.5V −5%
V
DDQ
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V