CY7C1399B-15VC Cypress Semiconductor Corp, CY7C1399B-15VC Datasheet - Page 4

• Manufacturer Part Number: CY7C1399B-15VC
• Description: IC SRAM 256KBIT 15NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1399B-15VC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1050

Switching Characteristics
Document #: 38-05071 Rev. *B
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes:
10. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
6.
7.
9.
8.
Parameter
Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
At any given temperature and voltage condition, t
t
The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
OL
HZOE
/I
OH
, t
HZCE
and capacitance C
[9, 10]
, t
HZWE
are specified with C
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
L
= 30 pF.
L
Over the Operating Range
= 5 pF as in AC Test Loads. Transition is measured ±500 mV from steady state voltage.
[7]
[7]
Description
[7, 8]
[9]
[7]
[7, 8]
HZCE
is less than t
LZCE
[6]
, t
HZOE
is less than t
HZWE
LZOE
and t
Min.
, and t
10
10
3
0
3
0
8
7
0
0
7
5
0
3
SD
1399B-10
.
HZWE
is less than t
Max.
10
10
10
5
5
5
7
LZWE
Min.
for any given device.
12
12
3
0
3
0
8
8
0
0
8
7
0
3
1399B-12
CY7C1399B
Max.
12
12
12
5
5
6
7
Page 4 of 10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns