CY7C1399B-12ZC Cypress Semiconductor Corp, CY7C1399B-12ZC Datasheet - Page 3

• Manufacturer Part Number: CY7C1399B-12ZC
• Description: IC SRAM 256KBIT 12NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1399B-12ZC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1049

Electrical Characteristics
Capacitance
AC Test Loads and Waveforms
Document #: 38-05071 Rev. *B
Equivalent to:
V
V
V
V
I
I
I
I
I
I
C
C
C
Note:
IX
OZ
OS
CC
SB1
SB2
Parameter
5.
OH
OL
IH
IL
IN
IN
OUT
: Addresses
: Controls
Tested initially and after any design or process changes that may affect these parameters.
OUTPUT
Parameter
[5]
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
Output Short Circuit
Current
V
Supply Current
Automatic CE Power-Down
Current — TTL Inputs
Automatic CE Power-Down
Current — CMOS Inputs
OUTPUT
THÉVENIN EQUIVALENT
CC
3.3V
INCLUDING
Operating
JIG AND
Description
[3]
SCOPE
167
C
L
Over the Operating Range (continued)
R1 317
Input Capacitance
Output Capacitance
1.73V
[4]
Description
R2
351
V
V
GND
Output Disabled
V
V
f = f
Max. V
V
f = f
Max. V
V
WE V
f=f
CC
CC
CC
CC
IN
CC
MAX
MAX
MAX
– 0.3V, or V
= Min., I
= Min., I
= Max., V
= Max., I
V
CC
IH
CC
CC
V
= 1/t
, or V
–0.3V or WE 0.3V,
I
, CE V
Test Conditions
, CE V
V
RC
OH
OL
OUT
CC
OUT
IN
= 4.0 mA
IN
= –2.0 mA
,
T
= 0 mA,
CC
A
V
= GND
IH
= 25 C, f = 1 MHz, V
IL
,
0.3V,
–0.3V, V
,
Test Conditions
IN
GND
3.0V
L
L
3 ns
CC
Min.
–0.3
2.4
2.2
–1
–5
10%
= 3.3V
1399B-15
+0.3V
Max.
–300
ALL INPUT PULSES
V
500
0.4
0.8
+1
+5
50
50
90%
5
4
CC
Max.
5
6
6
Min.
–0.3
2.4
2.2
–1
–5
1399B-20
CY7C1399B
+0.3V
Max.
–300
V
500
90%
0.4
0.8
+1
+5
45
50
5
4
CC
Page 3 of 10
10%
Unit
pF
pF
pF
3 ns
Unit
mA
mA
mA
mA
V
V
V
V
A
A
A
A