CY7C1049BV33-20VC Cypress Semiconductor Corp, CY7C1049BV33-20VC Datasheet - Page 3

• Manufacturer Part Number: CY7C1049BV33-20VC
• Description: IC SRAM 4MBIT 20NS 36SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1049BV33-20VC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 36-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1031

DC Electrical Characteristics
Capacitance
AC Test Loads and Waveforms
Note:
Document #: 38-05139 Rev. **
OUTPUT
C
C
V
V
V
V
I
I
I
I
I
3.
IX
OZ
CC
SB1
SB2
IN
OUT
OH
OL
IH
IL
Parameter
INCLUDING
JIG AND
SCOPE
Tested initially and after any design or process changes that may affect these parameters.
3.3V
Parameter
30 pF
[3]
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage
Current
V
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
(a)
CC
R1 317Ω
Operating
Description
Input Capacitance
I/O Capacitance
351Ω
R2
1049BV33–3
Description
OUTPUT
[1]
THÉ
Over the Operating Range (continued)
VENIN EQUIVALENT
V
I
V
I
GND < V
GND < V
Output Disabled
V
f = f
Max. V
V
V
Max. V
CE > V
V
or V
OH
OL
CC
CC
CC
IN
IN
IN
= 8.0 mA
MAX
= –4.0 mA
> V
< V
> V
IN
= Min.,
= Min.,
= Max.,
< 0.3V, f = 0
CC
CC
CC
IH
IL
CC
Test Conditions
= 1/t
167Ω
, f = f
I
OUT
(b)
, CE > V
,
or
< V
– 0.3V,
– 0.3V,
RC
< V
T
V
CC
MAX
A
CC
= 25°C, f = 1 MHz,
CC
= 3.3V
IH
,
1.73V
Com’l
Ind’l
Com’l/Ind’l
Com’l
Test Conditions
RiseTime:1 V/ns
GND
3.3V
L
Min.
–0.5
2.4
2.2
–1
–1
-20
V
CC
10%
Max.
160
170
0.4
0.8
0.5
+1
+1
30
8
90%
+ 0.5
ALL INPUT PULSES
Max.
Min.
–0.5
8
8
2.4
2.2
–1
–1
CY7C1049BV33
-25
V
CC
Max.
150
170
0.4
0.8
0.5
+1
+1
30
8
+ 0.5
Page 3 of 10
90%
Unit
pF
pF
10%
Fall time:
1 V/ns
1049BV33–4
Unit
mA
mA
mA
mA
mA
µA
µA
V
V
V
V