MT48H8M32LFB5-75:G TR Micron Technology Inc, MT48H8M32LFB5-75:G TR Datasheet - Page 16

IC SDRAM 256MBIT 132MHZ 90VFBGA

MT48H8M32LFB5-75:G TR

Manufacturer Part Number
MT48H8M32LFB5-75:G TR
Description
IC SDRAM 256MBIT 132MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr

Specifications of MT48H8M32LFB5-75:G TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (8Mx32)
Speed
132MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
8/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1328-2
Table 6: Capacitance
Note 1 applies to all parameters and conditions
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Parameter
Input capacitance: CLK
Input capacitance: All other input-only balls
Input/output capacitance: DQ
Note:
1. This parameter is sampled. V
= 1 MHz.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
16
DD
, V
Symbol
DDQ
C
C
C
L1
L2
L0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
= +1.8V; T
A
Min
= 25˚C; ball under test biased at 0.9V, f
2.0
2.0
2.5
Electrical Specifications
©2008 Micron Technology, Inc. All rights reserved.
Max
5.0
5.0
6.0
Unit
pF
pF
pF

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