IS42S83200B-6T-TR ISSI, Integrated Silicon Solution Inc, IS42S83200B-6T-TR Datasheet - Page 42

• Manufacturer Part Number: IS42S83200B-6T-TR
• Description: IC SDRAM 256MBIT 166MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S83200B-6T-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 32Mx8
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 170mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S83200B,
WRITE - FULL PAGE BURST
Notes:
1) Burst Length = Full Page
2) x16: A9, A11, and A12 = "Don't Care"
42
A0-A9, A11, A12
x8: A11 and A12 = "Don't Care"
DQM/DQML
COMMAND
BA0, BA1
DQMH
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
ACTIVE
AS
AS
AS
BANK
ROW
ROW
T0
t
t
IS42S16160B
CKH
CMH
t
t
t
AH
AH
AH
t
CK
t
RCD
NOP
T1
t
t
CMS
CL
t
COLUMN m
DS
D
BANK
WRITE
IN
T2
t
m
CMH
t
t
DH
CH
(2)
t
D
DS
IN
NOP
T3
m+
t
DH
1
t
D
DS
Integrated Silicon Solution, Inc. — www.issi.com
NOP
IN
T4
m+
t
DH
Full page completed
2
t
D
DS
NOP
IN
T5
m+
t
DH
3
t
DS
D
Tn+1
NOP
IN
m-
t
DH
1
BURST TERM
t
DS
DON'T CARE
Tn+2
t
DH
NOP
07/28/08
Rev. D