MT48H8M16LFB4-8 IT:J TR Micron Technology Inc, MT48H8M16LFB4-8 IT:J TR Datasheet - Page 53

• Manufacturer Part Number: MT48H8M16LFB4-8 IT:J TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-8 IT:J TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1236-2

Figure 29:
Figure 30:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
Random WRITE Cycles
WRITE-to-READ
Notes:
Notes:
1. Each WRITE command can be to any bank. DQM is LOW.
1. The WRITE command can be to any bank, and the READ command can be to any bank.
Command
Command
Address
Address
DQM is LOW. CL = 2 for illustration.
CLK
CLK
DQ
DQ
WRITE
WRITE
Bank,
Col n
Bank,
Col n
Din
Din
T0
T0
n
n
WRITE
Bank,
n + 1
Col a
NOP
Din
Din
T1
T1
a
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
53
WRITE
Bank,
Col x
READ
Bank,
Din
Col b
T2
T2
x
Don’t Care
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
Col m
Bank,
T3
Din
T3
NOP
m
Dout
NOP
T4
b
Don’t Care
NOP
Dout
b + 1
T5
©2008 Micron Technology, Inc. All rights reserved.
Timing Diagrams