MT48H8M16LFB4-8 IT:J TR Micron Technology Inc, MT48H8M16LFB4-8 IT:J TR Datasheet - Page 4

• Manufacturer Part Number: MT48H8M16LFB4-8 IT:J TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-8 IT:J TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1236-2

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PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
128mb_mobile_sdram_y35mLOT.fm - Rev. E 4/09 EN
Configuration Addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Key Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
VFBGA Ball Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
DC Electrical Characteristics and Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Idd Specifications and Conditions (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Idd Specifications and Conditions (x32) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Idd7 Specifications and Conditions (x16 and x32) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Electrical Characteristics and Recommended AC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . .18
AC Functional Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Target Output Drive Characteristics (full strength). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Target Output Drive Characteristics (three-quarter strength) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Target Output Drive Characteristics (one-half strength) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Truth Table – Commands and DQM Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Truth Table – Current State Bank n, Command to Bank n . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Truth Table – Current State Bank n, Command to Bank m . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
Truth Table – CKE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Burst Definition Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
List of Tables