MT45W1MW16BDGB-701 WT TR Micron Technology Inc, MT45W1MW16BDGB-701 WT TR Datasheet - Page 42
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MT45W1MW16BDGB-701 WT TR
Manufacturer Part Number
MT45W1MW16BDGB-701 WT TR
Description
IC PSRAM 16MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W1MW16BDGB-708_AT_TR.pdf
(59 pages)
Specifications of MT45W1MW16BDGB-701 WT TR
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1209-2
MT45W1MW16BDGB-701 WT TR
MT45W1MW16BDGB-701 WT TR
Figure 32:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
DQ[15:0]
LB#/UB#
A[19:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
High-Z
READ Burst Suspend
t
t
CSP
SP
ADDRESS
t
t
SP
SP
VALID
t
t
t
HD
HD
HD
High-Z
Note:
t
OLZ
t
ACLK
Non-default BCR settings for READ burst suspend: Latency code two (three clocks); WAIT
active LOW; WAIT asserted during delay.
t
t
BOE
CLK
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
OUTPUT
VALID
t
KOH
OUTPUT
VALID
OUTPUT
VALID
t
CEM
42
OUTPUT
VALID
t
OHZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
OLZ
t
BOE
OUTPUT
VALID
DON’T CARE
©2005 Micron Technology, Inc. All rights reserved.
Timing Diagrams
OUTPUT
VALID
t
t
OHZ
t
HZ
CBPH
High-Z
UNDEFINED
ADDRESS
VALID