MT47H32M16BN-25E IT:D TR Micron Technology Inc, MT47H32M16BN-25E IT:D TR Datasheet - Page 124

• Manufacturer Part Number: MT47H32M16BN-25E IT:D TR
• Description: IC DDR2 SDRAM 512MBIT 84FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16BN-25E IT:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 84-FBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 295mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 79: ODT Timing for Entering and Exiting Power-Down Mode
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
CKE
Applicable modes
Applicable timing parameters
t
AOND/
Any mode except
self refresh mode
Synchronous
t
AOFD
First CKE latched LOW
t
ANPD (3
t
CKs)
Active power-down slow (asynchronous)
Precharge power-down (asynchronous)
Active power-down fast (synchronous)
t
AONPD/
t
AOND/
Synchronous or
t
Asynchronous
t
AOFPD (asynchronous)
AOFD (synchronous)
124
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
First CKE latched HIGH
t
AXPD (8
t
CKs)
©2004 Micron Technology, Inc. All rights reserved.
Any mode except
self refresh mode
t
AOND/
Synchronous
ODT Timing
t
AOFD