MT47H32M16BN-25E IT:D TR Micron Technology Inc, MT47H32M16BN-25E IT:D TR Datasheet - Page 111

• Manufacturer Part Number: MT47H32M16BN-25E IT:D TR
• Description: IC DDR2 SDRAM 512MBIT 84FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16BN-25E IT:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 84-FBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 295mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SELF REFRESH
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
The SELF REFRESH command is initiated when CKE is LOW. The differential clock
should remain stable and meet
refresh mode. The procedure for exiting self refresh requires a sequence of commands.
First, the differential clock must be stable and meet
prior to CKE going back to HIGH. Once CKE is HIGH (
with three clock registrations), the DDR2 SDRAM must have NOP or DESELECT com-
mands issued for
ments is used to apply NOP or DESELECT commands for 200 clock cycles before
applying any other command.
t
XSNR. A simple algorithm for meeting both refresh and DLL require-
111
t
CKE specifications at least 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
t
CK specifications at least 1 ×
t
CKE [MIN] has been satisfied
©2004 Micron Technology, Inc. All rights reserved.
t
CK after entering self
SELF REFRESH
t
CK