MT47H32M16BN-25E IT:D TR Micron Technology Inc, MT47H32M16BN-25E IT:D TR Datasheet - Page 58

• Manufacturer Part Number: MT47H32M16BN-25E IT:D TR
• Description: IC DDR2 SDRAM 512MBIT 84FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16BN-25E IT:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 84-FBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 295mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AC Overshoot/Undershoot Specification
Table 25: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Table 26: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Figure 24: Overshoot
Figure 25: Undershoot
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 24 (page 58))
Maximum peak amplitude allowed for undershoot area
(see Figure 25 (page 58))
Maximum overshoot area above Vdd (see Figure 24 (page 58))
Maximum undershoot area below Vss (see Figure 25
(page 58))
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 24 (page 58))
Maximum peak amplitude allowed for undershoot area
(see Figure 25 (page 58))
Maximum overshoot area above VddQ (see Figure 24
(page 58))
Maximum undershoot area below VssQ (see Figure 25
(page 58))
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 25 (page 58) and Table 26 (page 58).
Vdd/VddQ
Vss/VssQ
Vss/VssQ
Maximum amplitude
Maximum amplitude
58
Time (ns)
Time (ns)
AC Overshoot/Undershoot Specification
0.5 V/ns
0.5 V/ns
0.19 V/ns
0.19 V/ns
-187E
0.50V
0.50V
-187E
0.50V
0.50V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Undershoot area
Overshoot area
0.66 V/ns
0.66 V/ns
-25/-25E
0.23 V/ns
0.23 V/ns
-25/-25E
0.50V
0.50V
0.50V
0.50V
Specification
Specification
0.80 V/ns
0.80 V/ns
0.23 V/ns
0.23 V/ns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
© 2004 Micron Technology, Inc. All rights reserved.
1.00 V/ns 1.33 V/ns
1.00 V/ns 1.33 V/ns
0.28 V/ns 0.38 V/ns
0.28 V/ns 0.38 V/ns
0.50V
0.50V
0.50V
0.50V
-37E
-37E
0.50V
0.50V
0.50V
0.50V
-5E
-5E