MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 42

IC FLASH 8GBIT 48TSOP

MT29F8G08BAAWP:A TR

Manufacturer Part Number
MT29F8G08BAAWP:A TR
Description
IC FLASH 8GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08BAAWP:A TR

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
8G (1G x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Figure 30:
TWO-PLANE INTERNAL DATA MOVE 00h-00h-35h/85h-11h-80h-10h
TWO-PLANE READ for INTERNAL DATA MOVE 00h-00h-35h
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
R/B#
R/B#
R/B#
I/Ox
I/Ox
I/Ox
1
2
80h
80h
80h
TWO-PLANE PROGRAM PAGE CACHE MODE Operation
Address/data input
Address/data input
Address/data input
1st plane
1st plane
1st plane
A TWO-PLANE INTERNAL DATA MOVE operation is similar to an INTERNAL DATA
MOVE operation, and requires two sequences. Issue a TWO-PLANE READ for
INTERNAL DATA MOVE (00h-00h-35h) command first, then the TWO-PLANE
PROGRAM for INTERNAL DATA MOVE (85h-11h-80h-10h) command. Data moves are
only supported within the planes from which data is read. The first-plane and second-
plane addresses must meet the two-plane addressing requirements for both the TWO-
PLANE READ for INTERNAL DATA MOVE (00h-00h-35h) and TWO-PLANE PROGRAM
for INTERNAL DATA MOVE (85h-11h-80h-10h) commands (see “Two-Plane
Addressing” on page 35).
The TWO-PLANE READ for INTERNAL DATA MOVE (00h-00h-35h) command is used in
conjunction with the TWO-PLANE PROGRAM for INTERNAL DATA MOVE (85h-11h-
80h-10h) command. First, write 00h to the command register, then write the first-plane
internal source address (5 cycles). Again, write 00h to the command register, followed by
the second-plane internal source address (5 cycles). Finally, write 35h to the command
register. After the 35h command, R/B# goes LOW for
their respective cache registers.
11h
11h
11h
t
t
t
DBSY
DBSY
DBSY
(or 81h)
(or 81h)
(or 81h)
80h
80h
80h
42
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Address/data input
Address/data input
Address/data input
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2nd plane
2nd plane
2nd plane
t
R while two pages are read into
15h
15h
10h
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
t
LPROG
t
t
CBSY
CBSY
1
2

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