MT29F8G08BAAWP:A TR Micron Technology Inc, MT29F8G08BAAWP:A TR Datasheet - Page 20

• Manufacturer Part Number: MT29F8G08BAAWP:A TR
• Description: IC FLASH 8GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08BAAWP:A TR

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 8G (1G x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Table 7:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
Command
TWO-PLANE PAGE READ
TWO-PLANE READ
for INTERNAL DATA MOVE
TWO-PLANE RANDOM DATA READ
TWO-PLANE/MULTIPLE-DIE
READ STATUS
TWO-PLANE PROGRAM PAGE
TWO-PLANE PROGRAM PAGE
CACHE MODE
TWO-PLANE PROGRAM
for INTERNAL DATA MOVE
TWO-PLANE BLOCK ERASE
Two-Plane Command Set
Notes:
1. Do not cross plane address boundaries when using TWO-PLANE READ for INTERNAL DATA
2. The TWO-PLANE RANDOM DATA READ command is limited to use with the TWO-PLANE
3. The TWO-PLANE/MULTIPLE-DIE READ STATUS command can be used to check status with
4. These commands are valid during busy when performing interleaved die operations. See
MOVE and TWO-PLANE PROGRAM for INTERNAL DATA MOVE. See Tables 3 and 4 on
pages 13 and 14 for plane address boundary definitions.
PAGE READ command.
two-plane and multiple-die operations, excluding the TWO-PLANE PAGE READ (00h-00h-
30h) command.
“Interleaved Die Operations” on page 47 for additional details.
Command
Cycle 1
00h
00h
06h
78h
80h
80h
85h
60h
Number of
Address
Cycles
5
5
5
3
5
5
5
3
20
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Command
11h-80h
11h-80h
11h-80h
Cycle 2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
00h
00h
E0h
60h
–
Number of
Address
Cycles
5
5
–
–
5
5
5
3
Command Definitions
Command
©2006 Micron Technology, Inc. All rights reserved.
Cycle 3
D0h
30h
35h
10h
15h
10h
–
–
During
Valid
Busy
Yes
No
No
No
No
No
No
No
Notes
1
2
3
4
4
1
4