MT47H256M4BT-3:A Micron Technology Inc, MT47H256M4BT-3:A Datasheet - Page 119
![IC DDR2 SDRAM 1GBIT 3NS 92FBGA](/photos/7/26/72643/557-92-fbga_sml.jpg)
MT47H256M4BT-3:A
Manufacturer Part Number
MT47H256M4BT-3:A
Description
IC DDR2 SDRAM 1GBIT 3NS 92FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H256M4HQ-5EE_TR.pdf
(131 pages)
Specifications of MT47H256M4BT-3:A
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (256M x 4)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
92-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H256M4BT-3:A
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 72: WRITE-to-Power-Down or Self Refresh Entry
Figure 73: WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
CK#
CKE
A10
CK#
CKE
A10
DQ
DQ
CK
CK
WRITE
Valid
Valid
WRITE
T0
T0
Notes:
Note:
NOP
NOP
T1
T1
WL = 3
WL = 3
1. Power-down or self refresh entry may occur after the WRITE burst completes.
1. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may oc-
2. WR is programmed through MR9–MR11 and represents (
cur 1 x
to next integer
NOP
NOP
T2
T2
t
CK later at Ta1, prior to
NOP
t
DO
NOP
DO
CK.
T3
T3
DO
DO
119
Valid
Valid
DO
DO
T4
T4
t
RP being satisfied.
DO
DO
Indicates a break in
time scale
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Valid
Valid
T5
T5
1Gb: x4, x8, x16 DDR2 SDRAM
WR 2
Valid 1
Valid
t WTR
Ta0
T6
Transitioning Data
t
self refresh entry 1
self refresh entry
Power-down or
WR [MIN] ns/
Power-down or
Transitioning Data
Power-Down Mode
© 2004 Micron Technology, Inc. All rights reserved.
NOP 1
NOP
Ta1
T7
t
CK) rounded up
t CKE (MIN)
t CKE (MIN)
Ta2
T8
Don’t Care
Don’t Care
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