MT45W2MW16PABA-70 WT Micron Technology Inc, MT45W2MW16PABA-70 WT Datasheet - Page 16
MT45W2MW16PABA-70 WT
Manufacturer Part Number
MT45W2MW16PABA-70 WT
Description
IC PSRAM 32MBIT 70NS 48VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W2MW16PABA-70_WT.pdf
(27 pages)
Specifications of MT45W2MW16PABA-70 WT
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
32M (2M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
48-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 15: Load Configuration Register Timing Requirements
Table 16: Deep Power-Down Timing Requirements
TIMING DIAGRAMS
Table 17: Power-Up Initialization Timing Requirements
09005aef80d481d3
AsyncCellularRAM_16_32.fm - Rev. A 2/18/04 EN
DESCRIPTION
DESCRIPTION
PARAMETER
Address Setup Time
Address Valid to End of Write
Chip Deselect to ZZ# LOW
Chip Enable to End of Write
Write Cycle Time
Write Pulse Width
Write Recovery Time
ZZ# LOW to WE# LOW
Chip Deselect to ZZ# LOW
Deep Power-Down Recovery
Minimum ZZ# Pulse Width
Power-Up Initialization Period
Vcc, VccQ = 1.7V
Figure 13: Power-Up Initialization Period
t
t
t
t
t
t
t
t
t
t
t
t
AS
AW
CDZZ
CW
WC
WP
WR
ZZWE
CDZZ
R
ZZMIN
PU
SYMBOL
SYMBOL
SYMBOL
ASYNC/PAGE CellularRAM MEMORY
16
t PU
MIN
MIN
MIN
150
150
10
70
70
70
40
10
5
0
5
0
-70
-70
-70
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MAX
MAX
MAX
500
normal operation
Device ready for
2 MEG x 16, 1 MEG x 16
Vcc (MIN)
MIN
MIN
MIN
150
150
85
85
85
40
10
10
5
0
5
0
-85
-85
-85
©2004 Micron Technology, Inc. All Rights Reserved.
MAX
MAX
MAX
500
UNITS
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ADVANCE
NOTES
NOTES
NOTES