MT45W4MW16BCGB-708 WT TR Micron Technology Inc, MT45W4MW16BCGB-708 WT TR Datasheet - Page 17
![IC PSRAM 64MBIT 70NS 54VFBGA](/photos/7/22/72262/557-54-vfbga_sml.jpg)
MT45W4MW16BCGB-708 WT TR
Manufacturer Part Number
MT45W4MW16BCGB-708 WT TR
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BCGB-701_IT.pdf
(69 pages)
Specifications of MT45W4MW16BCGB-708 WT TR
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1172-2
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- Download datasheet (3Mb)
Figure 11:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Refresh Collision During Variable-Latency READ Operation
Additional WAIT states inserted to allow refresh completion
High-Z
Note:
address
Valid
Nondefault BCR settings for refresh collision during variable-latency READ operation:
latency code 2 (3 clocks); WAIT active LOW; WAIT asserted during delay.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
17
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D0
D1
Bus Operating Modes
D2
©2005 Micron Technology, Inc. All rights reserved.
Undefined
D3
Don’t Care
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