MT29F2G08AABWP Micron Technology Inc, MT29F2G08AABWP Datasheet - Page 40

• Manufacturer Part Number: MT29F2G08AABWP
• Description: IC FLASH 2GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08AABWP

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 557-1148-2

Table 16:
Table 17:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Parameter
Parameter
Input pulse levels: MT29FxGxxxAB
Input rise and fall times
Input and output timing levels
Output load
ALE to data start
ALE hold time
ALE setup time
CE# hold time
CLE hold time
CLE setup time
CE# setup time
Data hold time
Data setup time
Write cycle time
WE# pulse width HIGH
WE# pulse width
WP# setup time
Test Conditions
AC Characteristics: Command, Data, and Address Input
MT29FxGxxxAB (V
MT29FxGxxxAB (V
Notes: 1. Verified in device characterization; not 100 percent tested.
Notes: 1. Timing for
2. For PROGRAM PAGE CACHE MODE operations, the x16 AC characteristics apply for both
with the first rising edge of WE# for data input.
x16 and x8 devices.
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
ADL
ALH
ALS
CH
CLH
CLS
CS
DH
DS
WC
WH
WP
WW
CC
CC
= 3.0V ±10%)
= 3.3V ±10%)
t
ADL begins in the ADDRESS cycle, on the final rising edge of WE#, and ends
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Min
100
10
25
10
10
25
35
10
20
45
15
25
30
40
x16
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1 TTL GATE and CL = 100pF
1 TTL GATE and CL = 50pF
Min
100
10
10
15
10
30
10
15
30
5
5
5
5
0.0V to 3.3V
Value
V
Electrical Characteristics
x8
5ns
CC
/2
Max
©2004 Micron Technology, Inc. All rights reserved.
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Notes
1
1
2
2
2
2
2
2
2
2
2
2
2