MT29F2G08AABWP Micron Technology Inc, MT29F2G08AABWP Datasheet - Page 13

• Manufacturer Part Number: MT29F2G08AABWP
• Description: IC FLASH 2GBIT 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08AABWP

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 557-1148-2

Figure 8:
Table 3:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Cycle
First
Second
Third
Fourth
Fifth
Cache Register
Data Register
2,048 blocks
per device
Array Addressing: MT29F2G16AxB
Array Organization for MT29F2G16AxB (x16)
I/O[15:8]
LOW
LOW
LOW
LOW
LOW
Notes: 1. CAx = column address; RAx = row address.
2. I/O[15:8] are not used during the addressing sequence and should be driven LOW.
RA18
RA26
LOW
LOW
I/O7
CA7
1,024
1,024
1 Block
RA17
RA25
LOW
LOW
I/O6
CA6
1,056 words
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
RA16
RA24
LOW
LOW
I/O5
CA5
13
32
32
RA15
RA23
LOW
LOW
I/O4
CA4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64 pages = 1 block
1 page
1 block
1 device = (1K + 32) words x 64 pages
RA14
RA22
LOW
LOW
I/O3
CA3
I/O 15
I/O 0
= (1K + 32) words
= (1K + 32) words x 64 pages
= (64K + 2K) words
= 2,112 Mb
x 2,048 blocks
(64K + 2K) words
CA10
RA13
RA21
LOW
I/O2
CA2
©2004 Micron Technology, Inc. All rights reserved.
RA12
RA20
LOW
I/O1
CA1
CA9
Addressing
RA11
RA19
RA27
I/O0
CA0
CA8