MT48H8M16LFB4-8 IT TR Micron Technology Inc, MT48H8M16LFB4-8 IT TR Datasheet - Page 52
MT48H8M16LFB4-8 IT TR
Manufacturer Part Number
MT48H8M16LFB4-8 IT TR
Description
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H8M16LFB4-8_IT_TR.pdf
(64 pages)
Specifications of MT48H8M16LFB4-8 IT TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1051-2
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Figure 38: Single READ – Without Auto Precharge
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
CLK
CKE
A10
DQ
t CMS
t CKS
Notes: 1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual” PRE-
t AS
t AS
t AS
ACTIVE
ROW
ROW
BANK
T0
t CMH
t CKH
t AH
t AH
t AH
t RCD
t RAS
t RC
2. A9 and A11 are “Don’t Care.”
3. PRECHARGE command not allowed or
t CK
CHARGE.
T1
NOP
DISABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m
BANK
T2
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
3
t AC
52
T4
D
NOP
OUT
t OH
t HZ
3
m
SINGLE BANKS
PRECHARGE
ALL BANKS
BANK(S)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
t
RAS would be violated.
t RP
T6
NOP
128Mb: x16 Mobile SDRAM
ACTIVE
ROW
T7
ROW
BANK
©2003 Micron Technology, Inc. All rights reserved.
Timing Diagrams
T8
NOP
DON’T CARE
UNDEFINED
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