MT48H8M16LFB4-8 IT TR Micron Technology Inc, MT48H8M16LFB4-8 IT TR Datasheet - Page 36
![IC SDRAM 128MBIT 125MHZ 54VFBGA](/photos/7/22/72286/557-54-fbga_sml.jpg)
MT48H8M16LFB4-8 IT TR
Manufacturer Part Number
MT48H8M16LFB4-8 IT TR
Description
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H8M16LFB4-8_IT_TR.pdf
(64 pages)
Specifications of MT48H8M16LFB4-8 IT TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1051-2
- Current page: 36 of 64
- Download datasheet (3Mb)
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with
11. Does not affect the state of the bank and acts as a NOP to that bank.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle.
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid
9. Deep Power-Down is power-saving feature of this Mobile SDRAM device. This command is
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when
state for precharging.
BURST TERMINATE when CKE is HIGH and DEEP POWER-DOWN when CKE is LOW.
auto precharge enabled and READs or WRITEs with auto precharge disabled.
t
RP is met. Once
36
t
RP is met, all banks will be in the idle state.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16 Mobile SDRAM
©2003 Micron Technology, Inc. All rights reserved.
Power-Down
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