MT45W4MW16BBB-706 WT TR Micron Technology Inc, MT45W4MW16BBB-706 WT TR Datasheet - Page 50

• Manufacturer Part Number: MT45W4MW16BBB-706 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BBB-706 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1008-2

Figure 39:
Table 31:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Symbol
t
t
t
t
t
t
CBPH
CEM
CEW
CLK
CSP
HD
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
Burst WRITE Timing Parameters
Burst WRITE Operation
Min
12.5
4.5
5
1
2
-708
WRITE Burst Identified
Notes: 1. Non-default BCR settings for burst WRITE operation: Latency code two (three clocks);
Max
(WE# = LOW)
t SP
t CSP
t SP
7.5
20
20
8
ADDRESS
t SP
High-Z
t CEW
VALID
2. Clock rates below 50 MHz (
t HD
t HD
t HD
WAIT active LOW; WAIT asserted during delay.
Min
15
-706/-856
5
1
5
2
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Max
7.5
20
20
8
t CLK
Units
t KHTL
ns
µs
ns
ns
ns
ns
t SP
t
50
CLK > 20ns) are allowed as long as
t SP t HD
D[0]
t CEM
Symbol
t
t
t
t
t
HZ
KHKL
KHTL
KP
SP
t HD
t KP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
Min
4
3
t KP
-708
D[2]
Max
1.8
8
9
©2003 Micron Technology, Inc. All rights reserved.
t
CSP specifications are met.
D[3]
Min
Timing Diagrams
-706/-856
5
3
t HD
t KHKL
t HZ
Max
2.0
11
t CBPH
8
DON’T CARE
High-Z
Units
ns
ns
ns
ns
ns