MT45W4MW16BBB-706 WT TR Micron Technology Inc, MT45W4MW16BBB-706 WT TR Datasheet - Page 20

• Manufacturer Part Number: MT45W4MW16BBB-706 WT TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BBB-706 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1008-2

Figure 16:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Read Configuration Register
Notes: 1. The WRITE on the third cycle must be CE#-controlled.
ADDRESS
LB#/UB#
2. CE# must be HIGH for 150ns before performing the cycle that reads a configuration regis-
DATA
WE#
OE#
CE#
ter.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
ADDRESS
XXXXh
(MAX)
READ
ADDRESS
(MAX)
XXXXh
READ
20
RCR: 0000h
BCR: 0001h
ADDRESS
WRITE
(MAX)
1
NOTE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
ADDRESS
READ
(MAX)
DON'T CARE
CR VALUE
OUT
Configuration Registers
©2003 Micron Technology, Inc. All rights reserved.