AT49BV040B-TU Atmel, AT49BV040B-TU Datasheet - Page 13

• Manufacturer Part Number: AT49BV040B-TU
• Description: IC FLASH 4MBIT 70NS 32TSOP
• Manufacturer: Atmel

Specifications of AT49BV040B-TU

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: AT49BV040B-70TU; AT49BV040B-70TU

18. Program Cycle Characteristics
Note:
19. Program Cycle Waveforms
20. Sector or Chip Erase Cycle Waveforms
Notes:
3499B–FLASH–4/06
Symbol
t
t
t
t
t
t
t
t
t
BP
AS
AH
DS
DH
WP
WPH
EC
SEC
1. 20 ns for V
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase the address depends on what sector is to be erased. (See note
3. For chip erase, the data should be 10H. For sector erase, the data should be 30H.
5 under
Parameter
Byte Programming Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Chip Erase Cycle Time
Main Sector Erase Cycle Time
“Command Definition Table” on page
A0 - A18
CC
A0 - A18
DATA
= 4.5V to 5.5V.
WE
OE
CE
(1)
t
AS
555
t
BYTE 0
AH
AA
t
t
DS
WP
AAA
t
BYTE 1
DH
55
7.)
555
t
WPH
30
BYTE 2
Min
20
20
20
0
0
80
(1)
555
2.7V to 3.6V and 4.5V to 5.5V
BYTE 3
AA
AAA
BYTE 4
Typ
900
55
10
8
Note 2
BYTE 5
Note 3
t
EC
AT49BV040B
Max
120
seconds
Units
ms
µs
ns
ns
ns
ns
ns
ns
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