AT49BV322DT-70TU Atmel, AT49BV322DT-70TU Datasheet - Page 27

• Manufacturer Part Number: AT49BV322DT-70TU
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: Atmel

Specifications of AT49BV322DT-70TU

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (2M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

31. Common Flash Interface Definition Table
3582B–FLASH–11/05
AT49BV322D(T)
(x16 Mode)
1Ch
1Dh
2Ch
2Dh
1Ah
1Bh
1Eh
1Fh
2Ah
2Bh
2Eh
2Fh
31h
32h
33h
34h
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
30h
Address
AT49BV322D(T)
(x8 Mode)
2Ah
2Ch
2Eh
3Ah
3Ch
3Eh
4Ah
4Ch
4Eh
5Ah
5Ch
5Eh
20h
22h
24h
26h
28h
30h
32h
34h
36h
38h
40h
42h
44h
46h
48h
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
AT49BV322D(T)
0000h
0027h
0036h
0090h
00A0h
0004h
0002h
0009h
000Fh
0004h
0004h
0004h
0004h
0016h
0002h
0000h
0002h
0000h
0002h
0007h
0000h
0020h
0000h
003Eh
0000h
0000h
0001h
0051h
0052h
0059h
0002h
0000h
0041h
0000h
0000h
0000h
0000h
Data
Comments
“Q”
“R”
“Y”
VCC min write/erase
VCC max write/erase
VPP min voltage
VPP max voltage
Typ word write – 10 µs
Typ dual word program time – 5 µs
Typ sector erase, 500 ms
Typ chip erase, 33,000 ms
Max word write/typ time
Max dual word program time/typ time
Max sector erase/typ sector erase
Max chip erase/ typ chip erase
Device size
x8/x16 device
x8/x16 device
Maximum number of bytes in multiple byte write = 4
Maximum number of bytes in multiple byte write = 4
2 regions, x = 2
8K bytes, Y = 7
8K bytes, Y = 7
8K bytes, Z = 32
8K bytes, Z = 32
64K bytes, Y = 62
64K bytes, Y = 62
64K bytes, Z = 256
64K bytes, Z = 256
AT49BV322D(T)
27