AT49BV322DT-70TU Atmel, AT49BV322DT-70TU Datasheet - Page 24

• Manufacturer Part Number: AT49BV322DT-70TU
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: Atmel

Specifications of AT49BV322DT-70TU

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (2M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

21. Program Cycle Characteristics
22. Program Cycle Waveforms
23. Sector or Chip Erase Cycle Waveforms
Notes:
24
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
BP
BPD
AS
AH
DS
DH
WP
WPH
WC
RP
EC
SEC1
SEC2
ES
PS
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
AT49BV322D(T)
(See note 3 under
Parameter
Byte/Word Programming Time
Byte/Word Programming Time in Dual Programming Mode
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Write Cycle Time
Reset Pulse Width
Chip Erase Cycle Time
Sector Erase Cycle Time (4K Word Sectors)
Sector Erase Cycle Time (32K Word Sectors)
Erase Suspend Time
Program Suspend Time
“Command Definition Table” on page
A0-A20
A0 - A20
DATA
DATA
WE
OE
CE
WE
OE
CE
(1)
t
AS
t
AS
555
t
WC
555
WORD 0
t
t
WC
AH
AA
t
AH
AA
t
t
DS
WP
t
AAA
t
DS
WP
WORD 1
AAA
t
DH
55
t
DH
55
555
t
WPH
WORD 2
555
80
PROGRAM CYCLE
t
WPH
13.)
A0
555
WORD 3
AA
ADDRESS
INPUT
DATA
AAA
WORD 4
Min
500
55
25
25
25
15
70
0
0
Note 2
t
BP
WORD 5
Note 3
t
EC
Typ
555
0.1
0.5
10
33
5
AA
Max
120
2.0
6.0
60
15
10
3582B–FLASH–11/05
seconds
seconds
seconds
Units
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs