AT49F2048A-70TC Atmel, AT49F2048A-70TC Datasheet - Page 2

• Manufacturer Part Number: AT49F2048A-70TC
• Description: IC FLASH 2MBIT 70NS 48TSOP
• Manufacturer: Atmel

Specifications of AT49F2048A-70TC

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 2M (256K x 8 or 128K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

advanced nonvolatile CMOS technology, the device offers
access times to 70 ns with power dissipation of just
275 mW. When deselected, the CMOS standby current is
less than 100 µA.
To allow for simple in-system reprogrammability, the
AT49F2048A does not require high input voltages for pro-
gramming. Five-volt-only commands determine the read
and programming operation of the device. Reading data
out of the device is similar to reading from an EPROM; it
has standard CE, OE and WE inputs to avoid bus connec-
tion. Reprogramming the AT49F2048A is performed by first
erasing a block of data and then programming on a byte-
by-byte or word-by-word basis.
The device is erased by executing the Erase command
sequence; the device internally controls the erase opera-
tion. The memory is divided into four blocks for erase oper-
ations. There are two 4K word parameter block sections:
the boot block and the main memory array block. The
Block Diagram
Device Operation
READ: The AT49F2048A is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high-
impedance state whenever CE or OE is high. This dual
line control gives designers flexibility in preventing bus
contention.
COMMAND SEQUENCES: When the device is first pow-
ered on, it will be reset to the read or standby mode,
depending upon the state of the control line inputs. In order
to perform other device functions, a series of command
sequences are entered into the device. The command
sequences are shown in the Command Definitions table
(I/O8 - I/O15 are don’t care inputs for the command codes).
2
AT49F2048A
typical number of program and erase cycles is in excess of
10,000 cycles.
The optional 8K word boot block section includes a repro-
gramming lockout feature to provide data integrity. This
feature is enabled by a command sequence. Once the boot
block programming lockout feature is enabled, the data in
the boot block cannot be changed when input levels of 5.5
volts or less are used. The boot sector is designed to con-
tain user secure code.
The BYTE pin controls whether the device data I/O pins
operate in the byte or word configuration. If the BYTE pin is
set at a logic “1” or left open, the device is in word configu-
ration; I/O0 - I/O15 are active and controlled by CE and OE.
If the BYTE pin is set at logic “0”, the device is in byte con-
figuration, and only data I/O pins I/O0 - I/O7 are active and
controlled by CE and OE. The data I/O pins I/O8 - I/O14
are tri-stated and the I/O15 pin is used as an input for the
LSB (A-1) address function.
The command sequences are written by applying a low
pulse on the WE or CE input with CE or WE low (respec-
tively) and OE high. The address is latched on the falling
edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard
microprocessor write timings are used. The address loca-
tions used in the command sequences are not affected by
entering the command sequences.
RESET: A RESET input pin is provided to ease some sys-
tem applications. When RESET is at a logic high level, the
device is in its standard operating mode. A low level on the
RESET input halts the present device operation and puts
the outputs of the device in a high impedance state. When
a high level is reasserted on the RESET pin, the device
112
4
4
04000
03FFF
03000
02FFF