AT49BV161-90TI Atmel, AT49BV161-90TI Datasheet - Page 22

IC FLASH 16MBIT 90NS 48TSOP

AT49BV161-90TI

Manufacturer Part Number
AT49BV161-90TI
Description
IC FLASH 16MBIT 90NS 48TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT49BV161-90TI

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8 or 1M x 16)
Speed
90ns
Interface
Parallel
Voltage - Supply
2.65 V ~ 3.3 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Program Cycle Characteristics
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
22
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
BP
BPVPP
AS
AH
DS
DH
WP
WPH
WC
RP
RH
EC
ECVPP
SEC
EPS
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
AT49BV/LV160(T)/161(T)
(See note 3 under Command Definitions.)
Parameter
Byte/Word Programming Time (V
Byte/Word Programming Time (V
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Write Cycle Time
Reset Pulse Width
Reset High Time before Read
Chip Erase Cycle Time (V
Chip Erase Cycle Time (V
Sector Erase Cycle Time
Erase or Program Suspend Time
A0-A19
DATA
WE
OE
CE
A0 -A19
DATA
(1)
PP
PP
WE
OE
CE
< 4.5V)
> 4.5V)
t
AS
IHPP
PP
t
> 4.5V)
AS
< V
555
t
WC
WORD 0
t
PP
AH
555
AA
t
WC
< 4.5V)
t
AH
t
t
DS
WP
AA
AAA
t
t
DS
WP
WORD 1
t
DH
AAA
55
t
DH
55
555
t
WPH
WORD 2
555
80
PROGRAM CYCLE
t
WPH
A0
555
WORD 3
ADDRESS
AA
INPUT
DATA
AAA
WORD 4
55
Min
500
40
30
40
30
70
50
t
0
0
BP
Note 2
WORD 5
Note 3
555
t
EC
AA
Typ
300
20
10
Max
200
100
400
12
15
6
1427L–FLASH–02/03
seconds
seconds
Units
ms
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs

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