AT28C040-20BI Atmel, AT28C040-20BI Datasheet

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AT28C040-20BI

Manufacturer Part Number
AT28C040-20BI
Description
IC EEPROM 4MBIT 200NS 32CDIP
Manufacturer
Atmel
Datasheet

Specifications of AT28C040-20BI

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
4M (512K x 8)
Speed
200ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-CDIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT28C04020BI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT28C040-20BI
Manufacturer:
ATMEL
Quantity:
23
Part Number:
AT28C040-20BI
Manufacturer:
NS
Quantity:
10
Features
Description
The AT28C040 is a high-performance electrically erasable and programmable read
only memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 440 mW.
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
NC
Read Access Time - 200 ns
Automatic Page Write Operation
Fast Write Cycle Time
Low Power Dissipation
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Single 5V
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
A12
NC
NC
NC
– Internal Address and Data Latches for 256 Bytes
– Internal Control Timer
– Page Write Cycle Time - 10 ms Maximum
– 1 to 256 Byte Page Write Operation
– 80 mA Active Current
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
A7
A6
A5
A4
A3
A2
A1
7
8
9
10
11
12
13
14
15
16
17
10% Supply
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Top View
LCC
39
38
37
36
35
34
33
32
31
30
29
A13
A8
A9
A11
NC
NC
NC
NC
OE
A10
CE
GND
I/O0
I/O1
I/O2
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
SIDE BRAZE,
FLATPACK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Top View
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
(continued)
4-Megabit
(512K x 8)
Paged Parallel
EEPROMs
AT28C040
Rev. 0542B–10/98
1

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AT28C040-20BI Summary of contents

Page 1

... JEDEC Approved Byte-Wide Pinout Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 440 mW. ...

Page 2

... The AT28C040 is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 256-byte page register to allow writ- ing 256 bytes simultaneously. During a write cycle, the address and 1 to 256 bytes of data are internally latched, freeing the address and data bus for other opera- tions ...

Page 3

... It should be BLC noted that once protected, the host can still perform a byte or page write to the AT28C040 so, the same 3-byte command sequence used to enable SDP must precede the data to be written. Once set, SDP will remain active unless the disable com- mand sequence is issued ...

Page 4

... ( Condition MHz OUT -400 -100 4. AT28C040-25 Operation Read Program 0°C - 70°C 0°C - 70°C -40°C - 85°C -40°C - 85°C -55°C - 125°C -40°C - 85°C 5V 10% 5V 10 OUT High High Z Min Max Units 0.8 V 2.0 V 0.45 V 2.4 V 4.2 V ...

Page 5

... C 8 OUT Note: 1. This parameter is characterized and is not 100% tested after the address transition wihtout impact on t ACC after the falling edge of CE without impact pF). L Output Test Load Max 10 12 AT28C040-20 AT28C040-25 Min Max Min Max 200 250 200 250 ...

Page 6

... AC Write Characteristics Symbol Parameter Address, OE Set-up Time AS OES t Address Hold Time AH t Chip Select Set-up Time CS t Chip Select Hold Time CH t Write Pulse Width ( Data Set-up Time Data, OE Hold Time DH OEH AC Write Waveforms WE Controlled CE Controlled AT28C040 6 Min Max Units 100 ...

Page 7

Page Mode Characteristics Symbol Parameter t Write Cycle Time WC t Address Set-up Time AS t Address Hold Time AH t Data Set-up Time DS t Data Hold Time DH t Write Pulse Width WP t Byte Load Cycle Time ...

Page 8

... After the command sequence has been issued and a page write operation follows, the page address inputs (A8 - A18) must be the same for each high to low transition of WE (or CE must be high only when WE and CE are both low. AT28C040 8 Software Data (1) Protection Disable Algorithm ...

Page 9

Data Polling Characteristics Symbol Parameter t Data Hold Time Hold Time OEH ( Output Delay OE t Write Recovery Time WR Notes: 1. These parameters are characterized and not 100% tested. 2. See AC ...

Page 10

... Non-Windowed, Ceramic Leadless Chip Carrier (LCC) Blank Standard Device: Endurance = 10K Write Cycles; Write Time = 10 ms AT28C040 10 Ordering Code AT28C040-20BC AT28C040-20FC AT28C040-20LC AT28C040-20BI AT28C040-20FI AT28C040-20LI AT28C040-20BI SL703 AT28C040-20FI SL703 AT28C040-20LI SL703 AT28C040-25BC AT28C040-25FC AT28C040-25LC AT28C040-25BI AT28C040-25FI AT28C040-25LI AT28C040-25BI SL703 AT28C040-25FI SL703 AT28C040-25LI SL703 ...

Page 11

Packaging Information 32B, 32-Lead, 0.600" Wide, Ceramic Side Braze Dual Inline (Side Braze) Dimensions in Inches and (Millimeters) 44L, 44-Pad, Non-Windowed, Ceramic Leadless Chip Carrier (LCC) Dimensions in Inches and (Millimeters)* MIL-STD-1835 C-5 *Ceramic lid standard unless specified. 32F, 32-Lead, ...

Page 12

... No licenses to patents or other intellectual prop Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life suppor t devices or systems. ...

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