AT49BV4096A-12RI Atmel, AT49BV4096A-12RI Datasheet - Page 10
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AT49BV4096A-12RI
Manufacturer Part Number
AT49BV4096A-12RI
Description
IC FLASH 4MBIT 120NS 44SOIC
Manufacturer
Atmel
Datasheet
1.AT49BV4096A-12RC.pdf
(16 pages)
Specifications of AT49BV4096A-12RI
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8 or 256K x 16)
Speed
120ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-SOIC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Program Cycle Characteristics
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
10
Symbol
t
t
t
t
t
t
t
t
BP
AS
AH
DS
DH
WP
WPH
EC
1.
2.
3.
OE must be high only when WE and CE are both low.
For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased.
(See note 4 under command definitions.)
For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
AT49BV004/4096A(T)
Parameter
Byte/Word Programming Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Erase Cycle Time
A0-A18
DATA
WE
A0-A18
OE
CE
DATA
WE
OE
CE
(1)
t
AS
t AS
5555
5555
t AH
WORD 0
t AH
BYTE/
AA
AA
t WP
t DS
t DS
t WP
2AAA
2AAA
t DH
WORD 1
BYTE/
55
t DH
55
5555
t WPH
WORD 2
5555
BYTE/
80
PROGRAM CYCLE
t WPH
A0
5555
WORD 3
BYTE/
AA
ADDRESS
INPUT DATA
2AAA
WORD 4
BYTE/
55
Min
100
100
100
50
0
0
Note 2
t BP
WORD 5
Note 3
BYTE/
Typ
30
t EC
5555
AA
Max
10
seconds
Units
µs
ns
ns
ns
ns
ns
ns