AT45DB642-TC Atmel, AT45DB642-TC Datasheet - Page 34
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AT45DB642-TC
Manufacturer Part Number
AT45DB642-TC
Description
IC FLASH 64MBIT 20MHZ 40TSOP
Manufacturer
Atmel
Datasheet
1.AT45DB642-TC.pdf
(37 pages)
Specifications of AT45DB642-TC
Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
64M (8192 pages x 1056 bytes)
Speed
20MHz Serial/5MHz Parallel
Interface
Parallel/Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 2. Algorithm for Randomly Modifying Data
Notes:
Sector Addressing
34
PA12
0
0
0
0
1
1
1
1
•
•
•
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
AT45DB642
cumulative page erase/program operations.
must use the address specified by the Page Address Pointer.
cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note
AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
PA11
0
0
0
0
1
1
1
1
•
•
•
PA10
0
0
0
0
1
1
1
1
•
•
•
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
PA9
0
0
0
1
0
0
1
1
(82H, 85H)
•
•
•
PA8
0
0
1
0
0
1
0
1
•
•
•
AUTO PAGE REWRITE
TO BUFFER TRANSFER
ADDRESS POINTER
MAIN MEMORY PAGE
INCREMENT PAGE
PA7
(53H, 55H)
(58H, 59H)
X
X
X
X
X
X
X
0
•
•
•
START
END
provide address of
page to modify
PA6
MEMORY PAGE PROGRAM
(2)
X
X
X
X
X
X
X
0
•
•
•
(2)
BUFFER TO MAIN
BUFFER WRITE
(84H, 87H)
(83H, 86H)
PA5
X
X
X
X
X
X
X
0
•
•
•
If planning to modify multiple
bytes currently stored within
a page of the Flash array
PA4
X
X
X
X
X
X
X
0
•
•
•
PA3
X
X
X
X
X
X
X
0
•
•
•
PA2 - PA0
X
X
X
X
X
X
X
X
•
•
•
1638F–DFLSH–09/02
Sector
29
30
31
32
0
1
2
3
•
•
•