28C64A-20/P Microchip Technology, 28C64A-20/P Datasheet - Page 4

IC EEPROM 64KBIT 200NS 28DIP

28C64A-20/P

Manufacturer Part Number
28C64A-20/P
Description
IC EEPROM 64KBIT 200NS 28DIP
Manufacturer
Microchip Technology
Datasheet

Specifications of 28C64A-20/P

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
200ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
28C64A
TABLE 1-4:
FIGURE 1-2:
DS11109K-page 4
Address Set-Up Time
Address Hold Time
Data Set-Up Time
Data Hold Time
Write Pulse Width
Write Pulse High Time
OE Hold Time
OE Set-Up Time
Data Valid Time
Time to Device Busy
Write Cycle Time (
Write Cycle Time (
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the pos-
Rdy/Busy
Address
CE, WE
Data In
2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until t
itive edge WE, whichever occurs first.
after the positive edge of WE or CE, whichever occurs first.
OE
Parameter
V
V
V
V
V
V
V
V
V
V
OH
OL
IH
IL
IH
IL
IH
IL
IH
IL
BYTE WRITE AC CHARACTERISTICS
PROGRAMMING WAVEFORMS
28C64A
28C64A
)
F)
t
AC Testing Waveform:
Output Load:
Input Rise/Fall Times:
Ambient Temperature:
t
OES
AS
Symbol
t
t
t
t
WPH
t
t
WPL
OEH
t
t
t
t
OES
t
t
WC
WC
DH
AS
AH
DS
DV
DB
t
DV
t
Min
100
AH
10
50
50
10
50
10
10
2
t
t
WPL
WC
t
DS
V
1 TTL Load + 100 pF
20 ns
Commercial (C):
Industrial
IH
= 2.4V; V
1000
Max
200
50
1
t
DH
IL
(I):
t
t
DB
OEH
= 0.45V; V
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Tamb =
Tamb =
s
2004 Microchip Technology Inc.
OH
Note 1
Note 2
0.5 ms typical
100 s typical
Busy
= 2.0V; V
0°C to +70°C
-40°C to +85°C
Remarks
OL
Ready
= 0.8V
DH

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