DS1250Y-100IND+ Maxim Integrated Products, DS1250Y-100IND+ Datasheet - Page 5

• Manufacturer Part Number: DS1250Y-100IND+
• Description: IC NVSRAM 4MBIT 100NS 32DIP
• Manufacturer: Maxim Integrated Products

Specifications of DS1250Y-100IND+

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4M (512K x 8)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-DIP Module (600 mil), 32-EDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A C E L E C T R IC A L C HA R A C T E R IS T IC S
PARAMETER
Read Cycle Time
Access Time
Output High-Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from
Output Active from
Data Setup Time
Data Hold Time
OE
CE
OE
to Output Valid
to Output Valid
or
CE
to Output Active
WE
WE
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
OEW
ACC
WR1
WR2
t
COE
DH1
DH2
WC
AW
OD
OH
WP
(T
RC
OE
CO
DS
A
: See Note 10) (V
5 of 10
MIN
70
70
55
15
30
10
5
5
0
5
5
0
DS1250AB-70
DS1250Y-70
(V
CC
MAX
CC
70
35
70
25
25
= 5V ±5% for DS1250AB)
= 5V ±10% for DS1250Y)
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
DS1250Y/AB
12
13
12
13
5
5
3
5
5
4