DS1250Y-100IND+ Maxim Integrated Products, DS1250Y-100IND+ Datasheet

IC NVSRAM 4MBIT 100NS 32DIP

DS1250Y-100IND+

Manufacturer Part Number
DS1250Y-100IND+
Description
IC NVSRAM 4MBIT 100NS 32DIP
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS1250Y-100IND+

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
4M (512K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-DIP Module (600 mil), 32-EDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
19-5647; Rev 12/10
FEATURES
 10 years minimum data retention in the
 Data is automatically protected during power
 Replaces 512k x 8 volatile static RAM,
 Unlimited write cycles
 Low-power CMOS
 Read and write access times of 70ns
 Lithium energy source is electrically
 Full ±10% V
 Optional ±5% V
 Optional industrial temperature range of
 JEDEC standard 32-pin DIP package
 PowerCap Module (PCM) package
www.maxim-ic.com
absence of external power
loss
EEPROM or Flash memory
disconnected to retain freshness until power is
applied for the first time
(DS1250AB)
-40°C to +85°C, designated IND
-
-
-
-
Directly surface-mountable module
Replaceable snap-on PowerCap provides
lithium backup battery
Standardized pinout for all nonvolatile
SRAM products
Detachment feature on PCM allows easy
removal using a regular screwdriver
CC
operating range (DS1250Y)
CC
operating range
1 of 10
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A18
DQ0 - DQ7
V
GND
NC
CE
WE
OE
GND
CC
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A15
A16
V
WE
NC
NC
OE
CE
CC
(Uese DS9034PC+ or DS9034PCI+ POWERCAP)
4096k Nonvolatile SRAM
32-Pin ENCAPSULATED PACKAGE
34-Pin POWERCAP MODULE (PCM)
GND
DQ0
DQ1
DQ2
A16
A14
A12
A18
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
740-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
GND V
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
BAT
DS1250Y/AB
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
CC
A18
A17
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0

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DS1250Y-100IND+ Summary of contents

Page 1

... Low-power CMOS  Read and write access times of 70ns  Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time  Full ±10% V operating range (DS1250Y) CC  Optional ±5% V operating range CC (DS1250AB)  Optional industrial temperature range of -40° ...

Page 2

... ODW DATA RETENTION MODE The DS1250AB provides full functional capability for V 4.5 volts. The DS1250Y provides full functional capability for V protects by 4.25 volts. Data is maintained in the absence of V The nonvolatile static RAMs constantly monitor V automatically write protect themselves, all inputs become “don’t care,” and all outputs become high- impedance ...

Page 3

... After a DS1250 PCM module base is reflow soldered, a DS9034PC PowerCap is snapped on top of the PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper attachment. DS1250 module bases and DS9034PC PowerCaps are ordered separately and shipped in separate containers. See the DS9034PC data sheet for further information DS1250Y/AB ...

Page 4

... See Note 10) A TYP MAX UNITS 5.0 5.25 V 5 ±5% for DS1250AB ±10% for DS1250Y) CC TYP MAX UNITS µA +1.0 µA +1 μA 200 600 μA 50 150 85 mA 4.62 4.75 V 4.37 4 ...

Page 5

... Write Recovery Time Output High-Z from WE Output Active from WE Data Setup Time Data Hold Time ( See Note 10 DS1250AB-70 DS1250Y-70 SYMBOL MIN MAX ACC COE WR1 t WR2 15 t ODW t 5 OEW DH1 t 10 DH2 DS1250Y/ ±5% for DS1250AB ±10% for DS1250Y) CC UNITS NOTES ...

Page 6

... READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTES and DS1250Y/AB ...

Page 7

... WRITE CYCLE 2 SEE NOTES and 13 POWER-DOWN/POWER-UP CONDITION SEE NOTE DS1250Y/AB ...

Page 8

... See Note 10) A TYP MAX UNITS µs 1.5 µs µ 125 TYP MAX UNITS years is measured from the latter of low transition, the output WE high transition, the output WE low transition, CE starting from the time power DS1250Y/AB NOTES 11 = +25°C) NOTES ...

Page 9

... TOLERANCE 5V ± 740 EDIP 5V ± PowerCap* 5V ± 740 EDIP 5V ± PowerCap* 5V ± 10% 32 740 EDIP 5V ± 10% 34 PowerCap* 5V ± 10% 32 740 EDIP 5V ± 10% 34 PowerCap* OUTLINE NO. MDT32+6 21-0245 PC2+5 21-0246 DS1250Y/AB SPEED GRADE (ns Note that a “+”, LAND PATTERN NO. — — ...

Page 10

... Updated the storage information, soldering temperature, and lead temperature information in the Absolute Maximum Ratings section; removed the -100 MIN/MAX information from the AC 12/10 Electrical Characteristics table; updated the Ordering Information table (removed -100 parts and leaded -70 parts); updated the Package Information table DESCRIPTION DS1250Y/AB PAGES CHANGED ...

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